Title :
Study on the preparation of aluminum nitride with high thermal conductivity
Author :
Zhao Dongliang ; Gao Ling
Author_Institution :
13th Res. Inst., Sci. & Technol. of ASIC Lab., CETC, Shijiazhuang, China
Abstract :
In this paper, aluminum nitride ceramic with high thermal conductivity was prepared by gas sintering using nano-particle Y2O3 as sintering aids. When the content of nano-particle Y2O3 was 2-4%, the sintering temperature was 1810°C and the holding time was 3 hours, the thermal conductivity of aluminum nitride ceramic could be reached 264.5 W/m·K The aluminum nitride ceramic with high thermal conductivity, that could substitute BeO, will be preferred to using in the power devices.
Keywords :
III-V semiconductors; aluminium compounds; power semiconductor devices; sintering; thermal conductivity; yttrium compounds; AlN; aluminum nitride ceramic; aluminum nitride preparation; gas sintering; holding time; nanoparticle yttrium oxide; power devices; sintering temperature; temperature 1810 degC; thermal conductivity; time 3 hour; Aluminum nitride; Ceramics; Conductivity; Grain boundaries; III-V semiconductor materials; Temperature; Thermal conductivity; aluminum nitride; sintering aids; sintering temperature; thermal conductivity;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922703
