Title :
UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications
Author :
Meyerson, Bernard S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The fundamental chemical principles underlying ultra-high-vacuum chemical vapor deposition (UHV CVD) are described in this overview. A variety of unique devices and structures, e.g. high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed. The role of fundamental interface chemistry in making such structures possible is considered
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; resonant tunnelling devices; reviews; semiconductor growth; semiconductor materials; silicon; tunnel diodes; vapour phase epitaxial growth; Si; Si:Ge alloys; UHV/CVD growth; VPE; device applications; fundamental chemical principles; high-speed graded-bandgap heterojunction bipolar transistors; interface chemistry; n-type resonant tunneling diodes; physics; ultra-high-vacuum chemical vapor deposition; Chemical technology; Chemical vapor deposition; Chemistry; Costs; Epitaxial growth; Physics; Semiconductor films; Silicon alloys; Substrates; Surface contamination;
Journal_Title :
Proceedings of the IEEE
