Recent advances in metal-organic vapor phase epitaxy

Author

Kuech, Thomas F.

Author_Institution

Dept. of Chem. Eng., Wisconsin Univ., Madison, WI, USA

Volume

80

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1609

Lastpage

1624

Abstract

Recent progress in the development and application of metal-organic vapor phase epitaxy (MOVPE) is reviewed. The formation of new and unique materials and structures, including wide-bandgap materials of both III-V and II-VI semiconductors, is discussed. The basic studies of the underlying chemistry and fluid flow behavior in MOVPE reactors and resulting improvements in the control of material properties and the uniformity of growth are considered. New growth precursors yielding both selective area growth and improved material purity are discussed. Improved reproducibility of the MOVPE growth product using growth monitors, for the real-time determination of film thickness and composition, which have resulted in greater acceptance of the MOVPE technique in the manufacturing environment, is discussed

Keywords

II-VI semiconductors; III-V semiconductors; reviews; semiconductor growth; vapour phase epitaxial growth; II-VI semiconductors; III-V semiconductors; MOVPE; MOVPE reactors; chemistry; composition; film thickness; fluid flow behavior; growth monitors; growth precursors; growth uniformity; manufacturing environment; material properties; material purity; metal-organic vapor phase epitaxy; real-time determination; reproducibility; selective area growth; structures; wide-bandgap materials; Chemistry; Epitaxial growth; Epitaxial layers; Fluid flow; Fluid flow control; II-VI semiconductor materials; III-V semiconductor materials; Inductors; Material properties; Reproducibility of results;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.168669

Filename

168669