Title :
Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study
Author :
Bigan, E. ; Allovon, M. ; Carré, M. ; Braud, C. ; Carenco, A. ; Voisin, P.
Author_Institution :
Centre Nat. d´´Etudes des Telecommun., Lab. de Bagneux, France
fDate :
1/1/1992 12:00:00 AM
Abstract :
The authors present optical waveguide modulation results obtained using Wannier-Stark localization in InGaAs-InAlAs superlattices grown by molecular beam epitaxy on InP substrates. It is shown that the results are in good agreement with a previously reported wavefunction model. The authors experimentally investigate the modulation behavior as a function of the electroabsorptive superlattice thickness. For this purpose the authors introduce the extinction ratio per unit waveguide length and per unit electric field as a relevant figure of merit that is broadly applicable to any electroabsorptive superlattice modulator. It is shown that inhomogeneous broadening imposes an optimum thickness for the electroabsorptive superlattice
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; optical waveguides; semiconductor superlattices; 0.6 V; 1.57 micron; 320 micron; III-V semiconductors; InGaAs-InAlAs superlattices; InP substrates; Wannier-Stark localization; electroabsorptive superlattice thickness; extinction ratio per unit waveguide length; figure of merit; inhomogeneous broadening; modulation behavior; molecular beam epitaxy; optical waveguide modulators; optimization; optimum thickness; wavefunction model; Absorption; Chirp modulation; Extinction ratio; Fiber lasers; Low voltage; Optical modulation; Optical superlattices; Optical waveguides; Semiconductor lasers; Semiconductor waveguides;
Journal_Title :
Quantum Electronics, IEEE Journal of