Title :
Design of InGaAs-InAlAs multiple-quantum-well (MQW) optical modulators
Author :
Kawano, Kenji ; Wakita, Koichi ; Mitomi, Osamu ; Kotaka, Isamu ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
1/1/1992 12:00:00 AM
Abstract :
Design of InGaAs-InAlAs multiple-quantum-well (MQW) optical modulators is described by employing the step segment method (SSM), the three-dimensional beam propagation method (3-D BPM), and the lumped element circuit model. Optical waveguides are treated as materials with complex refractive index. Field distributions, power confinement factors (Γ factors), propagation losses, etc. are calculated. It is found that the overlap integral is needed to calculate accurately coupling losses between the optical waveguides and single-mode fibers in place of the simple Gaussian beam-coupling formula and that quasi-single-mode propagation can be obtained even for thick core structures. Design procedures for the driving voltage, and frequency characteristics are also discussed
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical losses; optical modulation; optical waveguide theory; semiconductor quantum wells; III-V semiconductors; InGaAs-InAlAs multiple quantum well optical modulators; complex refractive index; coupling losses; design procedures; driving voltage; field distributions; frequency characteristics; lumped element circuit model; optical waveguides; overlap integral; power confinement factors; propagation losses; quasi-single-mode propagation; simple Gaussian beam-coupling formula; single-mode fibers; step segment method; thick core structures; three-dimensional beam propagation method; Circuits; Optical design; Optical materials; Optical modulation; Optical propagation; Optical refraction; Optical variables control; Optical waveguides; Propagation losses; Quantum well devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
