Title :
Simulation and modeling
Author_Institution :
Delco Electron. Corp., Kokomo, IN, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
A method for removing the discontinuity in G/sub ds/ going from the linear region to the saturation region in the MOS level 3 model of SPICE by modifying the channel length modulation expression is described. A detailed analysis of the problem and simulation results before and after the modification are presented.<>
Keywords :
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; MOS level 3 model; SPICE; SPICE 2; SPICE 3; channel length modulation expression; circuit simulation programs; discontinuity in G/sub ds/; discontinuity removal; linear region to saturation region transition; model discontinuities; modification; simulation results; Analog computers; Books; Circuit simulation; Computational modeling; Computer simulation; Concurrent computing; Design automation; Integrated circuit modeling; Parallel processing; SPICE;
Journal_Title :
Circuits and Devices Magazine, IEEE
