Title :
InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect
Author :
Kawamura, Yuichi ; Asai, Hiromitsu ; Matsuo, Shinji ; Amano, Chikara
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
1/1/1992 12:00:00 AM
Abstract :
New types of InGaAs-InAlAs multiple quantum well (MQW) optical bistable devices using the resonant tunneling effect are investigated. The bistability of these devices is obtained by the negative differential resistance (NDR) of the MQW resonant tunneling diodes (RTDs). Two types of MQW bistable devices are described. One is an MQW optical bistable device consisting of an MQW-RTD and an MQW modulator. Light-output-light-input bistable operation is obtained for this device at room temperature. The other is an InGaAs-InAlAs MQW resonant tunneling phototransistor (MQW-RPT), which shows a clear bistability in the collector-current-light-input characteristic. Inverter-type optical bistable operation with an on/off ratio of more than 10 dB is obtained by using the MQW-RPT as a laser driver. Optical memory operation is also demonstrated
Keywords :
aluminium compounds; gallium arsenide; heterojunction bipolar transistors; hot electron transistors; indium compounds; optical bistability; optical modulation; photodiodes; phototransistors; resonant tunnelling devices; semiconductor switches; tunnel diodes; InGaAs-InAlAs; MQW; MQW bistable devices; MQW modulator; collector-current-light-input characteristic; laser driver; multiple quantum well; negative differential resistance; on/off ratio; optical bistable devices; optical memory; resonant tunneling diodes; resonant tunneling effect; resonant tunneling phototransistor; room temperature; semiconductors; Absorption; Optical bistability; Optical devices; Optical modulation; Optical refraction; Optical variables control; Quantum well devices; Quantum well lasers; Resonant tunneling devices; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
