DocumentCode
1185049
Title
Semiconductor optical amplifier gain anisotropy: confinement factor against material gain
Author
Wang, W. ; Allaart, K. ; Lenstra, D.
Author_Institution
Dept. of Phys. & Astron., Vrije Univ., Amsterdam, Netherlands
Volume
40
Issue
25
fYear
2004
Firstpage
1602
Lastpage
1603
Abstract
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy. Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.
Keywords
semiconductor optical amplifiers; TE-TM mode confinement factors; TE-TM polarised light; bulk semiconductor optical amplifier; gain anisotropy; intrinsic material gain difference; pump current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046945
Filename
1368456
Link To Document