• DocumentCode
    1185049
  • Title

    Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

  • Author

    Wang, W. ; Allaart, K. ; Lenstra, D.

  • Author_Institution
    Dept. of Phys. & Astron., Vrije Univ., Amsterdam, Netherlands
  • Volume
    40
  • Issue
    25
  • fYear
    2004
  • Firstpage
    1602
  • Lastpage
    1603
  • Abstract
    It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy. Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.
  • Keywords
    semiconductor optical amplifiers; TE-TM mode confinement factors; TE-TM polarised light; bulk semiconductor optical amplifier; gain anisotropy; intrinsic material gain difference; pump current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046945
  • Filename
    1368456