• DocumentCode
    1185075
  • Title

    Laser induced oxidation for growth of ultrathin gate oxide

  • Author

    Singh, R. ; Paily, R. ; DasGupta, A. ; DasGupta, N. ; Misra, P. ; Kukreja, L.M.

  • Author_Institution
    Dept. of Electr. Eng., IIT Madras, Chennai, India
  • Volume
    40
  • Issue
    25
  • fYear
    2004
  • Firstpage
    1606
  • Lastpage
    1608
  • Abstract
    A novel technique for the growth of ultrathin SiO2 at room temperature using a pulsed laser has been demonstrated. It is observed that, after an initial high growth rate, the oxide thickness reduces with time and the quality of the oxide improves. The results of our experiments show that this technique can be used to grow high quality ultrathin SiO2 films with excellent control suitable for ULSI MOSFETs.
  • Keywords
    CMOS integrated circuits; MOS capacitors; ULSI; current density; dielectric thin films; leakage currents; oxidation; pulsed laser deposition; silicon compounds; 293 to 298 K; SiO2; ULSI MOSFET; high quality ultrathin SiO2 films; laser induced oxidation; pulsed laser deposition; ultrathin gate oxide growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046763
  • Filename
    1368459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185075