• DocumentCode
    1185088
  • Title

    Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor

  • Author

    Cheng, C.C. ; Tsai, Y.Y. ; Lin, K.W. ; Chen, H.I. ; Hsu, W.-H. ; Hong, C.-W. ; Liu, W.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
  • Volume
    40
  • Issue
    25
  • fYear
    2004
  • Firstpage
    1608
  • Lastpage
    1609
  • Abstract
    For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; gas sensors; high electron mobility transistors; hydrogen; palladium; 10.95 s; FET type hydrogen sensors; H2; Pd-AlGaAs; Pd-oxide-AI0.24Ga0.76As MOS structure; high electron mobility transistor; high-performance hydrogen sensor; hydrogen concentration; hydrogen detection; hydrogen gases; temperature dependent hydrogen sensing properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046833
  • Filename
    1368460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185088