Title :
Laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO4/KTP Green laser with GaAs saturable absorber
Author :
Li, Guiqiu ; Zhao, Shengzhi ; Yang, Kejian ; Zou, Jing
Author_Institution :
Sch. of Inf. Sci. & Eng., Shandong Univ., Jinan, China
Abstract :
The intracavity photon density is assumed to be Gaussian spatial distributions, and the nonlinear loss that is due to second-harmonic generation (SHG) to the photon-density equation is given under Gaussian spatial distributions in the rate equations for a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO4/KTP laser with a GaAs saturable absorber. These space-dependent rate equations are solved numerically. The dependences of pulsewidth, pulse repetition rate, single-pulse energy, and peak power on incident pump power are obtained for the generated-green-laser pulses. In the experiment, a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO4/KTP laser with a GaAs saturable absorber is realized, and the experimental results are consistent with the numerical solutions.
Keywords :
III-V semiconductors; Q-switching; gadolinium compounds; gallium arsenide; laser cavity resonators; neodymium; optical harmonic generation; optical losses; optical pulse generation; optical pumping; optical saturable absorption; potassium compounds; solid lasers; GaAs; GaAs saturable absorber; Gaussian spatial distributions; GdVO4:Nd; KTiOPO4:Nd; Nd:GdVO4/KTP green laser; green-laser pulse generation; intracavity photon density; intracavity-frequency-doubling; laser-diode end-pumping; nonlinear loss; passive Q-switching; pulse repetition rate; pulsewidth; second-harmonic generation; single-pulse energy; Absorption; Chemical lasers; Crystallization; Gallium arsenide; Laser modes; Laser theory; Laser transitions; Nonlinear equations; Pump lasers; Semiconductor diodes; Gaussian spatial distribution; LD-pumped; numerical solutions; passively; rate equations;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.850245
