• DocumentCode
    1185220
  • Title

    Spatially uniform degradation in nMOSFETs: evidence from gate capacitance and charge pumping current

  • Author

    Ling, C.H. ; Ang, D.S. ; Tan, S.E.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore
  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1720
  • Lastpage
    1722
  • Abstract
    A linear relationship is found to exist between the decrease in the gate-to-drain capacitance with stress time and the corresponding increase in charge pumping current, in hot-electron stressed nMOSFETs. The result supports a spatially uniform degradation at the Si/SiO2 interface, that starts within the LDD junction and progresses into the channel
  • Keywords
    high electron mobility transistors; insulated gate field effect transistors; LDD junction; charge pumping current; gate capacitance; gate-to-drain capacitance; hot-electron stressed nMOSFETs; nMOSFETs; spatially uniform degradation; stress time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941162
  • Filename
    328452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185220