Title :
Spatially uniform degradation in nMOSFETs: evidence from gate capacitance and charge pumping current
Author :
Ling, C.H. ; Ang, D.S. ; Tan, S.E.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore
fDate :
9/29/1994 12:00:00 AM
Abstract :
A linear relationship is found to exist between the decrease in the gate-to-drain capacitance with stress time and the corresponding increase in charge pumping current, in hot-electron stressed nMOSFETs. The result supports a spatially uniform degradation at the Si/SiO2 interface, that starts within the LDD junction and progresses into the channel
Keywords :
high electron mobility transistors; insulated gate field effect transistors; LDD junction; charge pumping current; gate capacitance; gate-to-drain capacitance; hot-electron stressed nMOSFETs; nMOSFETs; spatially uniform degradation; stress time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941162
