• DocumentCode
    1185227
  • Title

    Reduction of the off-state current of polysilicon thin-film transistors by means of a polysilicon buffer layer

  • Author

    Hamada, Hiroyuki ; Hirano, Keizo ; Goda, N. ; Abe, H. ; Hasegawa, Isao ; Okita, Yuji ; Niina, T.

  • Author_Institution
    Sanyo Electr. Co. Ltd., Kobe
  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1719
  • Lastpage
    1720
  • Abstract
    The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under Vgs=-25 V at Vds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å)
  • Keywords
    elemental semiconductors; silicon; thin film transistors; LCDs; Si; fused quartz substrate; n-channel single-gate coplanar transistors; off-state current; polysilicon buffer layer; polysilicon thin-film transistors; solid-phase-crystallisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941131
  • Filename
    328453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185227