DocumentCode :
118523
Title :
Thermal performance investigation of three-dimensional structure unit in double-sided cooling IGBT module
Author :
Chunlei Wang ; Libing Zheng ; Li Han ; Huachao Fang ; Ju Xu
Author_Institution :
Beijing Eng. Lab. of Electr. Drive Syst. & Power Electron. Device Packaging Technol., Beijing, China
fYear :
2014
fDate :
12-15 Aug. 2014
Firstpage :
622
Lastpage :
625
Abstract :
In order to improve the heat dissipation performance of IGBT module, a new type of structure unit for Three-dimensional IGBT module packaging which can implement double-sided cooling has been built. In view of the traditional single-sided cooling structure unit of IGBT module and the new type of Three-dimensional structure unit in double-sided cooling IGBT module, a corresponding mathematical model of heat dissipation of the structure has been deduced. The heat dissipation performances of the two models are calculated under the condition of the steady state heat conduction. Moreover, simulation calculation of heat conduction model has been carried out by ANSYS software. Result shows that under the same thermal boundary condition, heat dissipation performance of the double-sided cooling structure unit for Three-dimensional IGBT module package has improved by 47.5% compared with the traditional single-sided cooling structure unit of IGBT module package.
Keywords :
cooling; finite element analysis; heat conduction; insulated gate bipolar transistors; semiconductor device packaging; ANSYS software; double-sided cooling IGBT module; double-sided cooling structure unit; heat conduction model; heat dissipation performance; mathematical model; simulation calculation; single-sided cooling structure unit; steady state heat conduction; thermal boundary condition; thermal performance investigation; three-dimensional IGBT module packaging; three-dimensional structure unit; Cooling; Finite element analysis; Heat transfer; Heating; Insulated gate bipolar transistors; Mathematical model; Periodic structures; Double-sided cooling; FEM; IGBT; Steady-state conduction; Three-dimensional structure unit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
Type :
conf
DOI :
10.1109/ICEPT.2014.6922733
Filename :
6922733
Link To Document :
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