Title :
Calculation of shift of avalanche transit time phase delay due to optically injected carriers in indium phosphide avalanche diodes
Author :
Banerjee, J.P. ; Mukherjee, Rohan
Author_Institution :
Dept. of Electron. Sci., Calcutta Univ.
fDate :
9/29/1994 12:00:00 AM
Abstract :
A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes
Keywords :
III-V semiconductors; avalanche diodes; indium compounds; negative resistance; solid-state microwave devices; transit time devices; InP; avalanche transit time phase delay; computer calculation; depletion layer; electron injection; hole injection; indium phosphide diodes; microwave properties; negative resistance; numerical simulation; optically injected carriers; phase shift; photogenerated hole leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941158
