مرکز منطقه ای اطلاع رساني علوم و فناوري - Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

DocumentCode :

1185268

Title :

Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

Author :

Fan, C. ; Hansen, M.W. ; Esener, S.C. ; Wieder, H.H.

Volume :

Issue :

fYear :

1994

fDate :

9/29/1994 12:00:00 AM

Firstpage :

1713

Lastpage :

1714

Abstract :

An In_xAl_yGa_1-x-y device layer structure that enables the monolithic integration of In_0.25Al _0.75As/In_0.15Ga_0.85As MODFETs and In _0.25Al_0.35Ga_0.40As/In_0.25Ga _0.75As MQW modulators is reported. Current gain cutoff frequencies of 10 GHz are measured for 1 μm gate length MODFETs. MQW modulators operating at 1.05 μm demonstrate 20% transmission modulation for an applied 8 V

Keywords :

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical modulation; semiconductor quantum wells; 1 micron; 1.05 micron; 10 GHz; 8 V; GaAs; GaAs substrates; In_0.25Al_0.35Ga_0.40As -In_0.25Ga_0.75As; In_0.25Al_0.75As-In_0.15Ga_0.85As; InAlGaAs/InGaAs MODFETs; MQW modulators; current gain cutoff frequencies; layer structure; monolithic integration; transmission modulation;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19941128

Filename :

328457

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1185268