Title :
InGaAs/InAlAs multiquantum-well waveguided pin photodiodes with wide tunability and avalanche multiplication
Author :
Wakita, Ken ; Kotaka, I. ; Kozen, A.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
9/29/1994 12:00:00 AM
Abstract :
A new high-speed, waveguided InP based on the InGaAs/InAlAs multiquantum-well pin photodiode with gain and fabricated by metal organic vapour phase epitaxy is reported. The quantum-confined Stark effect can be used to tune this diode over a 250 nm range in the wavelength region around 1.55 μm. A 3 dB bandwidth of more than 12 GHz and avalanche multiplication have been observed
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; high-speed optical techniques; impact ionisation; indium compounds; optical waveguides; p-i-n photodiodes; semiconductor growth; semiconductor quantum wells; tuning; vapour phase epitaxial growth; 1.55 micron; 12 GHz; InGaAs-InAlAs; InGaAs/InAlAs multiquantum-well waveguided pin photodiodes; avalanche multiplication; fabrication; gain; high-speed device; metal organic vapour phase epitaxy; quantum-confined Stark effect; tunability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941142
