DocumentCode
1185285
Title
InAs/GaSb infrared photovoltaic detector at 77 K
Author
Yang, M.J. ; Bennett, Brian R.
Author_Institution
Naval Res. Lab., Washington, DC
Volume
30
Issue
20
fYear
1994
fDate
9/29/1994 12:00:00 AM
Firstpage
1710
Lastpage
1711
Abstract
The characterisation of an 8 μm infrared photovoltaic detector based on InAs/GaSb superlattices is carried out at 77 K for the first time. The built-in field is established by the Fermi level difference between the superlattice surface and the InAs buffer layer. The photocurrent is from photoexcited carriers traversing through the superlattice conduction miniband. A current responsivity of 0.07 A/W has been obtained, implying that one out of 10 photoexcited electrons has been collected
Keywords
Fermi level; III-V semiconductors; gallium compounds; indium compounds; infrared detectors; photodetectors; photovoltaic effects; semiconductor superlattices; 77 K; 8 micron; Fermi level; InAs-GaSb; InAs/GaSb superlattices; buffer layer; built-in field; conduction miniband; current responsivity; infrared photovoltaic detector; photocurrent; photoexcited carriers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941138
Filename
328459
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