Title :
Electroabsorption modulation in strained piezoelectric InGaAs/InP multiquantum wells operating at λ≈1.55 μm
Author :
Pabla, A.S. ; Hopkinson, Mark ; David, J.P.R. ; Khoo, E.A. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
fDate :
9/29/1994 12:00:00 AM
Abstract :
An investigation of absorption modulation using strained piezoelectric InGaAs/InP multiquantum wells grown on (111)B InP substrates is presented. Strong excitonic features are observed in the room temperature photocurrent spectra for a structure with 50 Å quantum wells under 0.6% compressive strain. The application of a reverse bias results in a large blue-shift of the absorption edge of up to 8 nm/V
Keywords :
III-V semiconductors; electroabsorption; excitons; gallium arsenide; indium compounds; optical modulation; photoconductivity; piezoelectric semiconductors; semiconductor quantum wells; (111)B InP substrates; 1.55 micron; InGaAs-InP; InP; absorption edge; blue-shift; electroabsorption modulation; excitons; photocurrent spectra; strained piezoelectric InGaAs/InP multiquantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941173
