Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Author

Buda, M. ; Hay, J. ; Tan, H.H. ; Wong-Leung, J. ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

39

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

625

Lastpage

633

Abstract

Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm^-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p⁺⁺ top GaAs layer, after ohmic contact heat treatment.

Keywords

III-V semiconductors; absorption coefficients; claddings; gallium arsenide; indium compounds; infrared sources; laser transitions; metallisation; ohmic contacts; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 0.3 micron; 980 nm; GaAs; GaAs layer; InGaAs; InGaAs semiconductor laser diodes; Ti-Pt-Au; Ti-Pt-Au metallization; asymmetric structure design; heat treatment; internal absorption coefficient; low loss; ohmic contact; p-clad InGaAs ridge waveguide quantum-well lasers; p-clad devices; restricted field extension; ridge region; rough interface; scattering; thin p-cladding; Absorption; Diode lasers; Gallium arsenide; Gold; Indium gallium arsenide; Metallization; Optical design; Particle scattering; Quantum well lasers; Semiconductor waveguides;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.810270

Filename

1195667