DocumentCode
1185485
Title
High performance InGaAsP/InP lasers on Si substrates
Author
Temkin, H. ; Macdonald, Michael ; Logan, R.A. ; Coblentz, D.
Volume
30
Issue
20
fYear
1994
fDate
9/29/1994 12:00:00 AM
Firstpage
1680
Lastpage
1681
Abstract
The performance of 1.3 μm InGaAsP buried heterostructure lasers with both n- and p-type contacts fabricated on one side is discussed. The lasers are flipchip bonded to Si wafers. The DC characteristics of the laser (Ith≃12-15 mA, η=0.19 mA/mW) are identical to those obtained on conventional metal heatsinks. The modulation bandwidth exceeds 3 GHz at a bias current of 20 mA. A bandwidth of 1.5 GHz can be obtained at a current of only 3 mA above threshold. The flipchip bonded lasers are shown to be stable up to at least 65°C
Keywords
III-V semiconductors; flip-chip devices; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical modulation; semiconductor lasers; 1.3 micron; 1.5 to 3 GHz; 12 to 15 mA; 65 C; DC characteristics; InGaAsP-InP; Si; Si substrates; buried heterostructure lasers; flipchip bond; flipchip bonded lasers; modulation bandwidth; n-type contacts; p-type contacts;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941149
Filename
328480
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