• DocumentCode
    1185505
  • Title

    Dynamic wavelength shift of vertical-cavity surface-emitting lasers

  • Author

    Mukaihara, Toshikazu ; Araki, Masahiro ; Maekawa, Hikaru ; Hayashi, Yasuhiro ; Koyama, Fumio ; Iga, Kenichi

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol.
  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1677
  • Lastpage
    1678
  • Abstract
    The dynamic wavelength shift or directly modulated vertical-cavity surface-emitting lasers (VCSELs) has been measured for the first time. The maximum wavelength shift at the resonance frequency of a 0.98 μm InGaAs-GaAs VCSEL is ~0.7 Å. The authors calculated the wavelength shift by a large signal analysis using rate equations. The linewidth enhancement factor α is estimated to be 4 by fitting the measured data with the theory
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical modulation; semiconductor lasers; spectral line breadth; 0.98 micron; InGaAs-GaAs; VCSEL; dynamic wavelength shift; large signal analysis; linewidth enhancement factor; rate equations; resonance frequency; surface-emitting lasers; vertical-cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941133
  • Filename
    328482