Title :
Dynamic wavelength shift of vertical-cavity surface-emitting lasers
Author :
Mukaihara, Toshikazu ; Araki, Masahiro ; Maekawa, Hikaru ; Hayashi, Yasuhiro ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol.
fDate :
9/29/1994 12:00:00 AM
Abstract :
The dynamic wavelength shift or directly modulated vertical-cavity surface-emitting lasers (VCSELs) has been measured for the first time. The maximum wavelength shift at the resonance frequency of a 0.98 μm InGaAs-GaAs VCSEL is ~0.7 Å. The authors calculated the wavelength shift by a large signal analysis using rate equations. The linewidth enhancement factor α is estimated to be 4 by fitting the measured data with the theory
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical modulation; semiconductor lasers; spectral line breadth; 0.98 micron; InGaAs-GaAs; VCSEL; dynamic wavelength shift; large signal analysis; linewidth enhancement factor; rate equations; resonance frequency; surface-emitting lasers; vertical-cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941133
