DocumentCode
1185513
Title
Dynamic linewidth of tunneling injection laser
Author
Yoon, Hee-Sung ; Sun, H.C. ; Bhattacharya, P.K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Volume
30
Issue
20
fYear
1994
fDate
9/29/1994 12:00:00 AM
Firstpage
1675
Lastpage
1677
Abstract
The dynamic linewidth of the recently demonstrated tunnelling injection laser is investigated. A significantly smaller dynamic linewidth is measured for this laser in comparison to the separate confinement heterostructure laser. A lower gain compression coefficient for this laser, deduced from measurements of the linewidth enhancement factor and the photon lifetime, is mainly responsible for reducing its dynamic linewidth, owing to the suppression of hot carrier effects by the tunnelling injection mechanism
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; spectral line breadth; tunnelling; InGaAs-GaAs; dynamic linewidth; gain compression coefficient; hot carrier effects suppression; linewidth enhancement factor; photon lifetime; tunneling injection laser; tunnelling injection mechanism;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941144
Filename
328483
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