Title :
Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiers
Author :
Alexandropoulos, Dimitris ; Adams, Mike J.
Author_Institution :
Electron. Syst. Eng. Dept., Univ. of Essex, Colechester, UK
fDate :
5/1/2003 12:00:00 AM
Abstract :
We have calculated the basic properties of multiple-quantum-well semiconductor optical amplifiers (SOAs) with active regions based on the newly proposed material GaInNAs. The band structure is modeled using k·p theory and accounting for strain effects and the material gain in the context of free-carrier theory. The performance of structures with different nitrogen composition that emit at the same wavelength is modeled using a multisection approach accounting for spontaneous emission. The trends in the SOA performance related parameters are identified and explained.
Keywords :
III-V semiconductors; band structure; gallium arsenide; indium compounds; k.p calculations; laser theory; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; GaInNAs; GaInNAs-GaAs-based semiconductor optical amplifiers; SOA performance; band structure; free-carrier theory; k·p theory; material gain; multi section approach; multiple-quantum-well semiconductor optical amplifiers; nitrogen composition; strain effects; Atomic beams; III-V semiconductor materials; Nitrogen; Optical device fabrication; Optical materials; Photonic band gap; Semiconductor materials; Semiconductor optical amplifiers; Spontaneous emission; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.810268
