Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiers

Author

Alexandropoulos, Dimitris ; Adams, Mike J.

Author_Institution

Electron. Syst. Eng. Dept., Univ. of Essex, Colechester, UK

Volume

39

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

647

Lastpage

655

Abstract

We have calculated the basic properties of multiple-quantum-well semiconductor optical amplifiers (SOAs) with active regions based on the newly proposed material GaInNAs. The band structure is modeled using k·p theory and accounting for strain effects and the material gain in the context of free-carrier theory. The performance of structures with different nitrogen composition that emit at the same wavelength is modeled using a multisection approach accounting for spontaneous emission. The trends in the SOA performance related parameters are identified and explained.

Keywords

III-V semiconductors; band structure; gallium arsenide; indium compounds; k.p calculations; laser theory; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; GaInNAs; GaInNAs-GaAs-based semiconductor optical amplifiers; SOA performance; band structure; free-carrier theory; k·p theory; material gain; multi section approach; multiple-quantum-well semiconductor optical amplifiers; nitrogen composition; strain effects; Atomic beams; III-V semiconductor materials; Nitrogen; Optical device fabrication; Optical materials; Photonic band gap; Semiconductor materials; Semiconductor optical amplifiers; Spontaneous emission; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.810268

Filename

1195670