• DocumentCode
    1185793
  • Title

    Designing nanosecond high voltage pulse generators using power MOSFETs

  • Author

    Baker, R. Jacob ; Ward, S.T.

  • Author_Institution
    Dept. of Electr. Eng., Idaho Univ., Boise, ID
  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1634
  • Lastpage
    1635
  • Abstract
    Power MOSFETs in series are used for generating high voltage, >1 kV, pulses with nanosecond rise and fall times. The design procedures for series operation and driving power MOSFETs to attain nanosecond switching times are given. A -1500 V pulse generator is designed with a 3 ns falltime and a 15 ns risetime into a 50 Ω load
  • Keywords
    insulated gate field effect transistors; power transistors; pulse generators; design procedures; nanosecond high voltage pulse generators; nanosecond rise and fall times; power MOSFETs; series operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941126
  • Filename
    328512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185793