Future directions and challenges for ETox flash memory scaling

The physical and electrical scaling challenges for ETox™ Flash memory, including reliability considerations, will be reviewed with potential directions for solutions identified. As Flash scales into the sub-100-nm regime, challenges arise due to the high voltage/field requirement of the programming and erase mechanisms and the stringent charge storage requirement of the dielectrics. These challenges will be overcome with innovations in new materials, new cell structures, and memory error management. Using these techniques will extend the viability of Flash memory to at least the 45-nm generation.