DocumentCode :
1186223
Title :
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
Author :
De Salvo, Barbara ; Gerardi, Cosimo ; Van Schaijk, Rob ; Lombardo, Salvatore A. ; Corso, Domenico ; Plantamura, Cristina ; Serafino, Stella ; Ammendola, Giuseppe ; Van Duuren, Michiel ; Goarin, Pierre ; Mei, Wan Yuet ; Van Der Jeugd, Kees ; Baron, Thierry
Author_Institution :
CEA-LETI, Grenoble, France
Volume :
4
Issue :
3
fYear :
2004
Firstpage :
377
Lastpage :
389
Abstract :
In this paper, an overview of today´s status and progress, as well as tomorrow´s challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.
Keywords :
electron traps; flash memories; nanostructured materials; nitrogen compounds; reliability; silicon compounds; NO; SONOS memories; SiO; advanced nonvolatile memories; discrete traps; floating-gate flash devices; silicon nanocrystal memories; Application specific integrated circuits; Guidelines; Material storage; Nanocrystals; Nonvolatile memory; Production; Random access memory; SONOS devices; Silicon; Technology forecasting;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2004.837209
Filename :
1369199
Link To Document :
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