Title :
6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs
Author :
Blondelle, J. ; De Neve, H. ; Demeester, Piet ; Van Daele, Peter ; Borghs, G. ; Baets, Roel
Author_Institution :
Dept. of Inf. Technol., Ghent Univ.
fDate :
10/13/1994 12:00:00 AM
Abstract :
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have bean investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 μW/steradian at 10 mA
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light emitting diodes; reflectivity; semiconductor quantum wells; 10 mA; 6 to 6.2 percent; GaAs-AlAs; GaAs/AlAs DBR; InGaAs-AlGaAs; cavity dimensions; distributed Bragg reflector; external quantum efficiency; high efficiency; planar microcavity LEDs; reflectivity; single quantum well; substrate emitting microcavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941216
