DocumentCode
1186225
Title
6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs
Author
Blondelle, J. ; De Neve, H. ; Demeester, Piet ; Van Daele, Peter ; Borghs, G. ; Baets, Roel
Author_Institution
Dept. of Inf. Technol., Ghent Univ.
Volume
30
Issue
21
fYear
1994
fDate
10/13/1994 12:00:00 AM
Firstpage
1787
Lastpage
1789
Abstract
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have bean investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 μW/steradian at 10 mA
Keywords
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light emitting diodes; reflectivity; semiconductor quantum wells; 10 mA; 6 to 6.2 percent; GaAs-AlAs; GaAs/AlAs DBR; InGaAs-AlGaAs; cavity dimensions; distributed Bragg reflector; external quantum efficiency; high efficiency; planar microcavity LEDs; reflectivity; single quantum well; substrate emitting microcavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941216
Filename
328565
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