Title :
Study of Ground-Signal-Ground TSV in terms of transmission performance
Author :
Li Qinghai ; Miao Min
Author_Institution :
Inf. Microsyst. Inst., Beijing Inf. Sci. & Technol. Univ., Beijing, China
Abstract :
With the development of the integrated circuits, the electronic devices become smaller and smaller, higher density within, and more and more function. The through silicon via (TSV) is the core to the three-dimensional integrated circuit. This paper focuses on the effect to the transmission characteristic of the Ground-Signal-Ground (GSG) TSV. Effects of design parameters, co-simulation with CPW, equivalent circuit model are studies. In a word, good agreement is achieved on transmission parameters between the 3D electromagnetic solver and the proposed lumped circuit model.
Keywords :
coplanar waveguides; equivalent circuits; integrated circuit design; integrated circuit modelling; three-dimensional integrated circuits; 3D electromagnetic solver; CPW; GSG; electronic device; equivalent circuit model; ground-signal-ground TSV technology; lumped circuit model; three-dimensional integrated circuit; through silicon via technology; transmission performance; Coplanar waveguides; Integrated circuit modeling; Silicon; Solid modeling; Substrates; Three-dimensional displays; Through-silicon vias; circuit model; ground-signal-ground; through silicon via; transmission parameters;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922767