Title :
Evaluation of SiO2 antifuse in a 3D-OTP memory
Author :
Li, Feng ; Yang, Xiaoyu ; Meeks, Albert T. ; Shearer, James T. ; Le, K.Y.
Author_Institution :
Matrix Semicond. Inc., Santa Clara, CA, USA
Abstract :
We have evaluated an antifuse technology used in a novel three-dimensional one-time-programmable (3D-OTP) nonvolatile solid-state memory. The 3D-OTP memory uses deposited polysilicon antifuse sandwiches to build its memory cells. The polysilicon based SiO2 antifuse show different breakdown characteristics compared to conventional traditional gate oxides. Long-term storage tests show that this 3D-OTP solid-state memory not only can be a general purpose ROM, but also can be an ideal media for archiving.
Keywords :
integrated circuit testing; integrated memory circuits; programmable circuits; silicon compounds; 3D memory; 3D one-time-programmable nonvolatile solid-state memory; SiO2; antifuse technology; archival media; long-term storage tests; memory cells; oxide breakdown; polysilicon antifuse sandwiches; CMOS memory circuits; Electric breakdown; Fabrication; Nonvolatile memory; Paper technology; Read only memory; Semiconductor diodes; Silicon; Solid state circuits; Testing;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.837118
