Title :
Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product
Author :
Mahon, C.J. ; Thibeault, Brian J. ; Wang, Guibin ; Jiang, Wei ; Coldren, Larry A. ; Bowers, John E.
fDate :
10/13/1994 12:00:00 AM
Abstract :
The addition of a resonant optical cavity to a photodetector enhances the quantum efficiency of the detector over a narrow wavelength range. The authors have designed, fabricated, and demonstrated resonant-cavity-enhanced GaAs pin photodetectors with near-unity quantum efficiency at 812 nm and transit-limited bandwidths of ~17 GHz
Keywords :
III-V semiconductors; gallium arsenide; optical resonators; p-i-n photodiodes; photodetectors; 17 GHz; 812 nm; GaAs; bandwidth-efficiency product; pin photodetector; quantum efficiency; resonant optical cavity; transit-limited bandwidths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941234
