DocumentCode
1186334
Title
Dry etch gate recess high breakdown voltage power P-HEMTs
Author
Wu, C.S. ; Ren, Fengyuan ; Pearton, S.J. ; Hu, Minglie ; Pao, C.K. ; Wang, Ranxiao F.
Author_Institution
GaAs Oper. Microelectron. Div., Hughes Aircraft Co., Torrance, CA
Volume
30
Issue
21
fYear
1994
fDate
10/13/1994 12:00:00 AM
Firstpage
1803
Lastpage
1805
Abstract
High breakdown voltage (18-20 V) and high power characteristics are obtained for a pseudomorphic InGaAs HEMT (PHEMT) processed with a novel single recess gate technique. High selectivity (>600:1 for GaAs over AlGaAs), damage-free dry etching with excellent uniformity (±7% across 3" diameter wafers, compared to ±20% for a wet etch double recess process) was employed. The devices exhibit good fT values (50 GHz at VDS of 5 V and 35 GHz at V DS of 7 V) at low IDS (100 mA/mm), an essential requirement for high power performance
Keywords
III-V semiconductors; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; sputter etching; 18 to 20 V; 50 GHz; AlGaAs; GaAs; InGaAs; damage-free dry etching; dry etch gate recess; high breakdown voltage; high power characteristics; microwave transistor; power PHEMTs; pseudomorphic HEMT; single recess gate technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941235
Filename
328576
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