Title :
Dry etch gate recess high breakdown voltage power P-HEMTs
Author :
Wu, C.S. ; Ren, Fengyuan ; Pearton, S.J. ; Hu, Minglie ; Pao, C.K. ; Wang, Ranxiao F.
Author_Institution :
GaAs Oper. Microelectron. Div., Hughes Aircraft Co., Torrance, CA
fDate :
10/13/1994 12:00:00 AM
Abstract :
High breakdown voltage (18-20 V) and high power characteristics are obtained for a pseudomorphic InGaAs HEMT (PHEMT) processed with a novel single recess gate technique. High selectivity (>600:1 for GaAs over AlGaAs), damage-free dry etching with excellent uniformity (±7% across 3" diameter wafers, compared to ±20% for a wet etch double recess process) was employed. The devices exhibit good fT values (50 GHz at VDS of 5 V and 35 GHz at V DS of 7 V) at low IDS (100 mA/mm), an essential requirement for high power performance
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; sputter etching; 18 to 20 V; 50 GHz; AlGaAs; GaAs; InGaAs; damage-free dry etching; dry etch gate recess; high breakdown voltage; high power characteristics; microwave transistor; power PHEMTs; pseudomorphic HEMT; single recess gate technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941235
