Effect of QD size and band-offsets on confinement energy in InN QD heterostructure

Author

Paul, Utpal ; Hasan, Mohammed ; Rahman, M.T. ; Bhuiyan, A.G.

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

13-15 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

Detailed theoretical analysis of how QD size variation and band-offset affects the confinement energy of InN QD is presented. Low dimensional structures show a strong quantum confinement effect, which results in shifting the ground state away from the band edge and discrete eigen-states. Graphically solving 1D Schrödinger ground quantized energy levels of electrons were computed and using Luttinger-Khon 4×4 Hamiltonian matrix ground quantized energy level of holes were determined. Our results allow us to tune dot size and band-offset to obtain required bandgap for InN based low dimensional device design.

Keywords

III-V semiconductors; Schrodinger equation; energy gap; ground states; indium compounds; semiconductor heterojunctions; semiconductor quantum dots; InN; Luttinger-Khon 4×4 Hamiltonian matrix ground quantized energy level; band edge; band gap; band-offset effects; confinement energy; discrete eigenstates; graphically solving 1D Schrodinger ground quantized energy levels; ground state; low dimensional device design; quantum confinement effect; quantum dot heterostructure; quantum dot size effect; quantum dot size variation; theoretical analysis; Charge carrier processes; Energy states; Equations; Materials; Mathematical model; Optoelectronic devices; Quantum dots; Confinement energy; Indium Nitride; Quantum dots (QD);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Information and Communication Technology (EICT), 2013 International Conference on

Conference_Location

Khulna

Print_ISBN

978-1-4799-2297-0

Type

conf

DOI

10.1109/EICT.2014.6777897

Filename

6777897