DocumentCode :
1186439
Title :
Extraction of the Effective Mobility of 
MOSFETs
Author :
Hinkle, Christoper L. ; Sonnet, Arif M. ; Chapman, Richard A. ; Vogel, Eric M.
Author_Institution :
Electr. Eng. Dept. & Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX
Volume :
30
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
316
Lastpage :
318
Abstract :
The extraction of the effective mobility on In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm2/V middots. The removal of C it response in the split C-V measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split C-V can be used to freeze out the D it response to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be ldquowarmed uprdquo to room temperature and an accurate measure of Q inv is achieved. These results confirm the fundamental performance advantages of In0.53Ga0.47As MOSFETs.
Keywords :
III-V semiconductors; MOSFET; carrier density; gallium arsenide; indium compounds; In0.53Ga0.47As; MOSFET; ac signal; free carrier density; metal-oxide-semiconductor field-effect transistors; substrate potential; Effective mobility; III–V metal–oxide–semiconductor field-effect transistor (MOSFET); InGaAs; interface states; split $C$ $V$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2012880
Filename :
4798191
Link To Document :
