Title :
Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs
Author :
Pei, Yi ; Rajan, Siddharth ; Higashiwaki, Masataka ; Chen, Zhen ; DenBaars, Steven P. ; Mishra, SiddharthUmesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
fDate :
4/1/2009 12:00:00 AM
Abstract :
The effect of SiNx passivation thickness on the power performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) has been studied. A model is proposed to explain the surface-state dispersion and passivation of AlGaN/GaN HEMTs. Based on this model, a multidielectric passivation method has been proposed and demonstrated to both provide lower dielectric capacitance and help remove dc-RF dispersion.
Keywords :
III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; high electron mobility transistors; passivation; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; SiN; dc-RF dispersion; dielectric capacitance; dielectric thickness; high-electron-mobility transistors; multidielectric passivation method; power added efficiency; power performance; surface-state dispersion; Dielectric; gallium nitride; high-electron-mobility transistors (HEMTs); passivation; power; power-added efficiency (PAE);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2012444
