DocumentCode
1186467
Title
12 GHz 
GaN/AlN/AlGaN Nanowire MISFET
Author
Vandenbrouck, Simon ; Madjour, Kamel ; Theron, Didier ; Dong, Yajie ; Li, Yat ; Lieber, Charles M. ; Gaquiere, Christophe
Author_Institution
Centre Nat. de la Rech. Sci., Inst. of Electron. Microelectron. & Nanotechnol., Villeneuve-d´´Ascq
Volume
30
Issue
4
fYear
2009
fDate
4/1/2009 12:00:00 AM
Firstpage
322
Lastpage
324
Abstract
GaN/AlN/AlGaN/GaN nanowire metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated for the first time with submicrometer gate lengths. Their microwave performances were investigated. An intrinsic current-gain cutoff frequency (F T) of 5 GHz as well as an intrinsic maximum available gain (F MAX) cutoff frequency of 12 GHz have been obtained for the first time and associated with a gate length of 0.5 mum. These results show the great potentiality of GaN-based nanowire FETs for microwave applications.
Keywords
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; nanowires; wide band gap semiconductors; GaN-AlN-AlGaN; intrinsic maximum available gain; metal-insulator-semiconductor field-effect transistors; microwave applications; nanowire MISFET; submicrometer gate lengths; Heterojunction; metal–insulator–semiconductor FET (MISFET); microwave field-effect transistors (FETs); quantum wires; semiconductor devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2014791
Filename
4798194
Link To Document