Title :
A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
Author :
Xiongfei Yu ; Chunxiang Zhu ; Hang Hu ; Chin, A. ; Li, M.F. ; Byung Jin Cho ; Dim-Lee Kwong ; Foo, P.D. ; Ming Bin Yu
Author_Institution :
Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore
Abstract :
Metal-insulator-metal (MIM) capacitors with different HfO2 thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO2 thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/μm2 and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10/sup -8/A/cm2 at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications.
Keywords :
MIM devices; capacitance; chemical vapour deposition; dielectric losses; dielectric thin films; hafnium compounds; leakage currents; thin film capacitors; 10 to 30 nm; ALD HfO/sub 2/ dielectrics; HfO/sub 2/; HfO/sub 2/ thickness; capacitance density; high-density MIM capacitor; low leakage current; low tangent values; metal-insulator-metal capacitors; silicon integrated circuit applications; small frequency dependence; voltage coefficients of capacitance; Application specific integrated circuits; Capacitance; Frequency dependence; Hafnium oxide; Leakage current; MIM capacitors; Metal-insulator structures; Silicon; Temperature dependence; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.808159
