Title :
1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors
Author :
Zhao, J.H. ; Tone, K. ; Alexandrov, P. ; Fursin, L. ; Weiner, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p/sup +/n junction gates are created on the sidewalls of deep trenches by angled Al implantation, which eliminates the need for epitaxial regrowth during the JFET fabrication. Blocking voltages up to 1710 V has been achieved with a voltage supporting drift layer of only 9.5 μm by using a two-step junction termination extension. The TI-VJFET shows a low specific on-resistance R/sub ON-sp/ of 2.77m/spl Omega/cm2, corresponding to a record high value of V/sub B//R/sub ON-sp/ equal to 1056 MW/cm2.
Keywords :
current density; ion implantation; isolation technology; junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 1710 V; 4H-SiC; 9.5 micron; SiC; TI-VJFET; angled Al implantation; blocking voltages; current density; epitaxial regrowth; p/sup +/n junction gates; power field-effect transistor; sidewalls; specific on-resistance; trenches; two-step junction termination extension; vertical junction field-effect transistors; voltage supporting drift layer; Current density; Electric breakdown; Etching; FETs; Fabrication; MOSFETs; Plasma applications; Silicon carbide; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.808841
