A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment

Author

Eliseev, P.G. ; Drakin, A.E. ; Pittroff, W.

Author_Institution

P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia

Volume

30

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

2271

Lastpage

2276

Abstract

This is a study of the dependence of the emission wavelength on the cavity length observed in laser diodes with InGaAsP/InP buried ridge stripe (BRS) structure. Theoretical calculations were made taking into account the variation of the threshold gain due to the influence of the cavity length on the total optical loss and, therefore, on the level of the carrier density at the threshold. This density affects the spectral position of the gain peak thus creating the regular dependence of the emission wavelength on the cavity length. The band-shrinkage effect and the free carrier absorption effect are also considered. In samples covering the spectral range of 1.46-1.53 μm, the calculated and experimental results agree satisfactorily

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser cavity resonators; laser theory; optical losses; rectangular waveguides; semiconductor lasers; 1.46 to 1.53 mum; 1.5 mum; InGaAsP-InP; InGaAsP/InP BRS laser diodes; band-shrinkage effect; buried ridge stripe; carrier density; cavity length; emission wavelength; free carrier absorption effect; gain peak; laser diodes; laser emission wavelength variations; spectral position; spectral range; threshold gain; total optical loss; Chemical lasers; Diode lasers; Indium phosphide; Laser modes; Laser theory; Optical losses; Optical pumping; Optical resonators; Optical scattering; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.328600

Filename

328600