Title :
Low-loss Bragg-reflector lateral-transverse-mode confinement in AlGaInP red laser
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
10/1/1994 12:00:00 AM
Abstract :
A low-loss Bragg-reflector-waveguide (BRW) structure is proposed for AlGaInP red lasers. This BRW laser uses (AlGaInP/GaAs)n Bragg-reflector (BR) block layers in place of conventional GaAs block layers. Propagating-mode calculations reveal that an aluminum content (x) lower than 0.2 for (AlxGa1-x)0.5In 0.5P in the BR block layers is sufficient for reducing mode loss together with confining the lateral transverse mode. Mode loss in the (AlGaInP/GaAs)n BR region is reduced resonantly to one-third that of a conventional GaAs block region. This reduction originates from a combination of Bragg reflection and the low absorption loss in the AlGaInP crystal. The refractive-index step, formed at the edge of a ridge stripe by the BR block layers, is around 1×10-2
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; indium compounds; laser modes; optical losses; optical waveguides; refractive index; semiconductor lasers; (AlxGa1-x)0.5In0.5P; AlGaInP; AlGaInP crystal; AlGaInP red laser; AlGaInP/GaAs; Bragg-reflector block layers; GaAs; aluminum content; lateral transverse mode; low absorption loss; low-loss Bragg-reflector lateral-transverse-mode confinement; low-loss Bragg-reflector-waveguide structure; mode loss; propagating-mode calculations; refractive-index step; ridge stripe; Absorption; Aluminum; Gallium arsenide; Laser modes; Laser tuning; Optical propagation; Optical refraction; Propagation losses; Resonance; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
