Gain measurements on one, two, and three strained GaInP quantum well laser diodes

Author

Hunziker, Guido ; Knop, Werner ; Harder, Christoph

Author_Institution

IBM Res. Div., Zurich, Switzerland

Volume

30

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

2235

Lastpage

2238

Abstract

We report on systematic investigations of the modal gain below threshold for one, two, and three compressively strained 680 nm AlGaInP quantum well lasers using the Hakki-Paoli method. Accurate values of the gain are obtained by carefully spacial filtering the light for the fundamental waveguide mode. Gain flattening and peak gain shifts are observed even at moderate pumping levels. It is shown that the gain scales very well with the number of quantum wells. We also observe that gain flattening starts at current densities per quantum well of 700 A/cm ²

Keywords

III-V semiconductors; current density; gallium compounds; indium compounds; laser modes; optical pumping; semiconductor lasers; spatial filters; 680 nm; AlGaInP; GaInP; Hakki-Paoli method; below threshold; compressively strained; current densities; fundamental waveguide mode; gain flattening; gain measurements; gain scales; modal gain; moderate pumping levels; peak gain shifts; spacial filtering; strained quantum well laser diodes; Diode lasers; Gain measurement; Gallium arsenide; Laser modes; Laser theory; Optical waveguides; Pump lasers; Quantum well lasers; Substrates; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.328605

Filename

328605