DocumentCode
1186656
Title
Inversion-layer induced body current in SOI MOSFETs with body contacts
Author
Hongchin Lin ; Lin, Jemin ; Chang, Robert C.
Author_Institution
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Volume
24
Issue
2
fYear
2003
Firstpage
111
Lastpage
113
Abstract
This letter investigates the body current of thin silicon-on-insulator MOSFETs with body contacts using H-gate and T-gate structures. Due to tunneling between the inversion layer and body contacts, the extra body current was measured and confirmed by the floating-source measurement technique. The drain current at saturation is increased due to the extra body current, which may result in smaller output resistance. A measurement example is also demonstrated.
Keywords
MOSFET; inversion layers; silicon-on-insulator; tunnelling; H-gate structures; SOI MOSFETs; T-gate structures; body contacts; floating-source measurement technique; inversion-layer induced body current; output resistance; saturation drain current; tunneling; Contact resistance; Current measurement; Electrical resistance measurement; Immune system; Implants; MOSFETs; Semiconductor films; Silicon on insulator technology; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2002.808168
Filename
1196033
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