Title :
A 10-b 125-MHz CMOS digital-to-analog converter (DAC) with threshold-voltage compensated current sources
Author :
Chin, Shu-Yuan ; Wu, Chung-Yu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
11/1/1994 12:00:00 AM
Abstract :
This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-μm double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources. In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to ±1/2 LSB is within 8 ns. The chip area is 1.8 mm×1.0 mm
Keywords :
CMOS integrated circuits; capacitance; constant current sources; convertors; digital-analogue conversion; linearisation techniques; measurement errors; 0.8 mum; 1 mm; 1.8 mm; 10 bit/s; 125 MHz; 150 mW; 3 ns; 5 V; CMOS digital-to-analog converter; DAC; conversion rate; current sources; current variations; differential linearity errors; double-poly double-metal CMOS technology; high-speed COMS DAC; integral linearity errors; linearity error; master unit current sources; new current source; power consumption; rise/fall time; silicon area; single 5-V power supply; slave unit current sources; stray capacitance; threshold-voltage compensated current source; threshold-voltage compensated current sources; two-stage current array; two-stage weighted current array; CMOS process; Circuits; Decoding; Digital-analog conversion; Energy consumption; Frequency; Linearity; Master-slave; Silicon; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of