Subsurface damage distribution of ground silicon wafers

The subsurface damage (SSD) distributions in different crystal orientations and radial locations of silicon wafers (100) are analyzed through cross-section microscopy method. The experimental results show that the subsurface damage depth is non-uniform in the ground wafer. Along the radial direction, the subsurface damage depth increases from the center to the edge of the wafer, and the depth in <;110> crystal orientation is larger than that in <;100> crystal orientation.