A novel modeling of TSV MOS capacitance by finite difference method

Author

Cheng Huang ; Sheng Liu ; Jianping Zhu ; Wanchun Tang ; Wei Zhuang

Author_Institution

Nanjing Univ. of Sci. & Technol., Nanjing, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

881

Lastpage

884

Abstract

This paper proposed a novel modeling of the TSV MOS capacitance by finite difference (FD) method without the assumption of the full depletion approximation (FDA). The potential distribution in the oxide liner and depletion region can be obtained by FD with only one iteration. With the potential distribution, the TSV capacitance-voltage (C-V) characteristics can be easily obtained and good agreements are achieved with other references.

Keywords

MOS capacitors; finite difference methods; three-dimensional integrated circuits; C-V characteristics; FD method; TSV MOS capacitance modeling; capacitance-voltage characteristics; depletion region; finite difference method; oxide liner; potential distribution; through silicon via technology; Capacitance; Capacitance-voltage characteristics; Electric potential; Finite difference methods; Mathematical model; Silicon; Through-silicon vias; Capacitance-voltage characteristics; Finite difference (FD) method; Through-silicon via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922789

Filename

6922789

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=118692