DocumentCode
118693
Title
Diamond sawing process of 12 inch low-K silicon wafer applied in smart card
Author
Xiangfei Kong ; Xiulei Wang ; Caifeng Wu
Author_Institution
Production & Quality Dept., CEC Huada Electron. Design Co., Ltd., Beijing, China
fYear
2014
fDate
12-15 Aug. 2014
Firstpage
885
Lastpage
887
Abstract
Chip topside peeling is a major problem affecting the quality in diamond sawing process of 12inch low-K silicon wafer applied in smart card chip. The effects of sawing parameters on wafer topside peeling quality are investigated in this work and it is found that the blade height is the main factor influencing the peeling quality. The optimized process showed that the topside peeling did not permeate throughout chip´s seal ring and the stability of peeling performance had been able to meet the mass production quality of 12 inch low-K diamond sawing process in the field of smart card production.
Keywords
diamond; grinding; mass production; sawing; seals (stoppers); smart cards; stability; wafer level packaging; blade height; chip seal ring; chip topside peeling; diamond sawing process; low-K silicon wafer; mass production quality; size 12 inch; smart card; wafer topside peeling quality; Blades; Diamonds; Sawing; Seals; Silicon; Smart cards; 12inch silicon wafer; chip topside peeling; diamond sawing process; smart card;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/ICEPT.2014.6922790
Filename
6922790
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