Title :
Diamond sawing process of 12 inch low-K silicon wafer applied in smart card
Author :
Xiangfei Kong ; Xiulei Wang ; Caifeng Wu
Author_Institution :
Production & Quality Dept., CEC Huada Electron. Design Co., Ltd., Beijing, China
Abstract :
Chip topside peeling is a major problem affecting the quality in diamond sawing process of 12inch low-K silicon wafer applied in smart card chip. The effects of sawing parameters on wafer topside peeling quality are investigated in this work and it is found that the blade height is the main factor influencing the peeling quality. The optimized process showed that the topside peeling did not permeate throughout chip´s seal ring and the stability of peeling performance had been able to meet the mass production quality of 12 inch low-K diamond sawing process in the field of smart card production.
Keywords :
diamond; grinding; mass production; sawing; seals (stoppers); smart cards; stability; wafer level packaging; blade height; chip seal ring; chip topside peeling; diamond sawing process; low-K silicon wafer; mass production quality; size 12 inch; smart card; wafer topside peeling quality; Blades; Diamonds; Sawing; Seals; Silicon; Smart cards; 12inch silicon wafer; chip topside peeling; diamond sawing process; smart card;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922790