Reliability evaluation on high power light emitting diodes

Author

Lu Guoguang ; Hao Mingming ; Huang Yun ; Zhang Hongqi

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

928

Lastpage

932

Abstract

In this paper, the main failure modes and mechanisms were investigated through some failure analysis cases, based on this, Subsequent 160°C, 170°C and180°C lifetime tests were completed. According to the method of least squares, the degradation model of high power light emitting diodes is obtained. Using the model and ALTA9 software, the extrapolated lifetime of high power light emitting diode at 25°C is 37718 hours. We also obtain an acceleration factor 70.5 of resulting in a thermal activation energy of Ea=0.35eV using Arrhenius function.

Keywords

failure analysis; least squares approximations; light emitting diodes; reliability; ALTA9 software; Arrhenius function; acceleration factor; degradation model; failure analysis; failure modes; high power light emitting diodes; least squares method; lifetime testing; reliability evaluation; temperature 160 degC; temperature 170 degC; temperature 180 degC; temperature 25 degC; thermal activation energy; time 37718 hour; Aging; Bonding; Failure analysis; Light emitting diodes; Materials; Reliability engineering; failure mechanism; failure mode; lifetime; light emitting diode; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922799

Filename

6922799