Title :
Impact-ionization-assisted intermediate band solar cell
Author :
Luque, Antonio ; Martí, Antonio ; Cuadra, Lucas
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Abstract :
The effect on the efficiency of the intermediate band solar cell of certain types of impact ionization mechanisms is studied. It turns out to have several interesting advantages. For example, this mechanism may lead to cells with an efficiency that, although similar to that of the multijunction cells, would be otherwise very insensitive to the spectral mismatch. The efficiency of structures of p, n, or intrinsic type is also discussed in addition to the metallic intermediate band analyzed in earlier works.
Keywords :
Auger effect; Fermi level; electron-hole recombination; impact ionisation; semiconductor device models; solar cells; Auger recombination; impact ionization mechanisms; intermediate band solar cell; intrinsic type structures; metallic intermediate band; n-type structures; p-type structures; photovoltaics; solar cell efficiency; spectral mismatch; Absorption; Electron emission; Impact ionization; Manufacturing; Photonic band gap; Photovoltaic cells; Quantum dots; Solar power generation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.809024
