• DocumentCode
    118731
  • Title

    Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication

  • Author

    Rafael-Valdivia, G. ; Zhiguo Su ; Urquizo, Anthony ; Mendoza, Thalia

  • Author_Institution
    P.P. Ing. Software, Univ. La Salle, Bogota, Peru
  • fYear
    2014
  • fDate
    5-7 Nov. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
  • Keywords
    III-V semiconductors; broadband networks; data communication; gallium arsenide; microwave transistors; radiofrequency power amplifiers; semiconductor device models; wide band gap semiconductors; GaAs; GaAs transistors; GaN; GaN transistors; broadband data communication; frequency dispersion phenomena; wideband communications; Dispersion; Gallium nitride; Integrated circuit modeling; Mathematical model; Pulse measurements; Radio frequency; Transistors; Circuit modeling; FETs; memory effects; microwave devices; pulsed measurements; scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications (LATINCOM), 2014 IEEE Latin-America Conference on
  • Conference_Location
    Cartagena de Indias
  • Print_ISBN
    978-1-4799-6737-7
  • Type

    conf

  • DOI
    10.1109/LATINCOM.2014.7041886
  • Filename
    7041886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=118731