Title :
On the design of MOS dynamic sense amplifiers
Author :
Wang, Niantsu N.
fDate :
7/1/1982 12:00:00 AM
Abstract :
This paper is concerned with the optimal design of MOS dynamic sense amplifiers used in MOS dynamic RAM´s. An analysis of the operation of MOS dynamic sense latches has been carried out and optimal control for the latches has been derived. A first-order analysis of the effects of parameter mismatches on the sensitivity of cross-coupled pairs is also presented.
Keywords :
Computer-aided circuit analysis and design; MOS memory integrated circuits; MOSFET amplifiers; Random-access memories; Circuits; DRAM chips; Helium; Latches; Optimal control; Pulse amplifiers; Semiconductor memory; Signal design; Signal detection; Voltage;
Journal_Title :
Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCS.1982.1085178
